Datasheet

ADP1870/ADP1871 Data Sheet
Rev. B | Page 4 of 44
Parameter Symbol Conditions Min Typ Max Unit
ADP1870ARMZ-0.6/
ADP1871ARMZ-0.6 (600 kHz)
600 kHz
On-Time V
IN
= 5 V, V
OUT
= 2 V, T
J
= 25°C 500 540 580 ns
Minimum On-Time V
IN
= 20 V, V
OUT
= 0.8 V 82 110 ns
Minimum Off-Time 65% duty cycle (maximum) 340 400 ns
ADP1870ARMZ-1.0/
ADP1871ARMZ-1.0 (1.0 MHz)
1.0 MHz
On-Time V
IN
= 5 V, V
OUT
= 2 V, T
J
= 25°C 285 312 340 ns
Minimum On-Time V
IN
= 20 V 60 85 ns
Minimum Off-Time 45% duty cycle (maximum) 340 400 ns
OUTPUT DRIVER CHARACTERISTICS
High-Side Driver
Output Source Resistance I
SOURCE
= 1.5 A, 100 ns, positive pulse (0 V to 5 V) 2.25 3 Ω
Output Sink Resistance I
SINK
= 1.5 A, 100 ns, negative pulse (5 V to 0 V) 0.7 1 Ω
Rise Time
2
t
r,DRVH
V
BST
− V
SW
= 4.4 V, C
IN
= 4.3 nF (see Figure 60) 25 ns
Fall Time
2
t
f,DRVH
V
BST
− V
SW
= 4.4 V, C
IN
= 4.3 nF (see Figure 61) 11 ns
Low-Side Driver
Output Source Resistance I
SOURCE
= 1.5 A, 100 ns, positive pulse (0 V to 5 V) 1.6 2.2 Ω
Output Sink Resistance
I
SINK
= 1.5 A, 100 ns, negative pulse (5 V to 0 V)
0.7
1
Ω
Rise Time
2
t
r,DRVL
V
REG
= 5.0 V, C
IN
= 4.3 nF (see Figure 61) 18 ns
Fall Time
2
t
f,DRVL
V
REG
= 5.0 V, C
IN
= 4.3 nF (see Figure 60) 16 ns
Propagation Delays
DRVL Fall to DRVH Rise
2
t
tpdhDRVH
V
BST
− V
SW
= 4.4 V (see Figure 60) 15.4 ns
DRVH Fall to DRVL Rise
2
t
tpdhDRVL
V
BST
− V
SW
= 4.4 V (see Figure 61) 18 ns
SW Leakage Current I
SWLEAK
V
BST
= 25 V, V
SW
= 20 V, V
REG
= 5 V 110 µA
Integrated Rectifier
Channel Impedance I
SINK
= 10 mA 22 Ω
PRECISION ENABLE THRESHOLD
Logic High Level V
IN
= 2.9 V to 20 V, V
REG
= 2.75 V to 5.5 V 245 285 330 mV
Enable Hysteresis V
IN
= 2.9 V to 20 V, V
REG
= 2.75 V to 5.5 V 37 mV
COMP VOLTAGE
COMP Clamp Low Voltage V
COMP(low)
From disabled state, release COMP/EN pin to enable
device (2.75 V ≤ V
REG
≤ 5.5 V)
0.47 V
COMP Clamp High Voltage V
COMP(high)
(2.75 V ≤ V
REG
≤ 5.5 V) 2.55 V
COMP Zero Current Threshold V
COMP_ZCT
(2.75 V ≤ V
REG
≤ 5.5 V) 1.07 V
THERMAL SHUTDOWN T
TMSD
Thermal Shutdown Threshold Rising temperature 155 °C
Thermal Shutdown Hysteresis 15 °C
Hiccup Current Limit Timing
6
ms
1
The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure 60 and Figure 61), C
GATE
= 4.3 nF, and the upper- and lower-side
MOSFETs being Infineon BSC042N03MSG.
2
Not automatic test equipment (ATE) tested.