Datasheet

ADP5065 Data Sheet
Rev. D | Page 28 of 40
Bit No. Mnemonic Access Default Description
[1:0] IEND[1:0] R/W 01 = 52.5 mA
Termination current programming bus. The values of the termination
current can be programmed as per the following values:
00 = 32.5 mA.
01 = 52.5 mA.
10 = 72.5 mA.
11 = 92.5 mA.
Table 19. Charging Current, Register Address 0x04 Bit Descriptions
Bit No. Mnemonic Access Default Description
7 C/20 EOC R/W The C/20 bit has priority over the other settings (C/10 EOC and IEND).
When this bit is set to high, C/20 programming is used. 27.5 mA
minimum value.
6 C/10 EOC R/W
The C/10 bit has priority over the other setting (END) but not C/20
EOC.
When this bit is set to high, C/10 programming is used unless C/20
EOC is set to high. 27.5 mA minimum value.
5 Tied high in metal R 1
[4:2] ICHG[2:0] R/W 111 = 1250 mA Fast charge current programming bus. The values of the constant
current charge can be programmed as per the following values:
000 = 550 mA.
001 = 650 mA.
010 = 750 mA.
011 = 850 mA.
100 = 950 mA.
101 = 1050 mA.
110 = 1150 mA.
111 = 1250 mA.
[1:0] ITRK_DEAD[1:0] R/W 10 = 20 mA Trickle and weak charge current programming bus. The values of the
trickle and weak charge currents can be programmed as per the
following values:
00 = 5 mA.
01 = 10 mA.
10 = 20 mA.
11 = 20 mA.
Table 20. Voltage Threshold, Register Address 0x05 Bit Descriptions
Bit No. Mnemonic Access Default Description
7 Not used R
[6:5] VRCH[1:0] R/W 11 = 260 mV Recharge voltage programming bus. The values of the recharge
threshold can be programmed as per the following values:
00 = 80 mV.
01 = 140 mV.
10 = 200 mV.
11 = 260 mV.
[4:3] VTRK_DEAD[1:0] R/W 01 = 2.5 V Trickle to fast charge dead battery voltage programming bus. The
values of the trickle to fast charge threshold can be programmed as
per following values:
00 = 2.4 V.
01 = 2.5 V.
10 = 2.6 V.
11 = 3.3 V.