Datasheet

Data Sheet ADR01/ADR02/ADR03/ADR06
Rev. R | Page 7 of 20
ADR06 ELECTRICAL CHARACTERISTICS
V
IN
= 5.0 V to 36.0 V, V
IN
= 5.0 V to 26.0 V for ADR06WARZ, T
A
= 25°C, unless otherwise noted.
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE V
O
A and C grades 2.994 3.000 3.006 V
INITIAL ACCURACY V
OERR
A and C grades 6 mV
0.2 %
OUTPUT VOLTAGE V
O
B grade 2.997 3.000 3.003 V
INITIAL ACCURACY V
OERR
B grade 3 mV
0.1 %
TEMPERATURE COEFFICIENT TCV
O
A grade, 8-lead SOIC, 40°C < T
A
< +125°C 3 10 ppm/°C
A grade, 5-lead TSOT, 40°C < T
A
< +125°C 25 ppm/°C
A grade, 5-lead SC70, 40°C < T
A
< +125°C 25 ppm/°C
B grade, 8-lead SOIC, 40°C < T
A
< +125°C 1 3 ppm/°C
B grade, 5-lead TSOT, 40°C < T
A
< +125°C 9 ppm/°C
B grade, 5-lead SC70, 40°C < T
A
< +125°C 9 ppm/°C
C grade, 8-lead SOIC, 40°C < T
A
< +125°C 10 40 ppm/°C
DROPOUT VOLTAGE V
DO
2 V
LINE REGULATION ∆V
O
/∆V
IN
V
IN
= 5.0 V to 36.0 V, V
IN
= 5.0 V to 26.0 V for
ADR06WARZ, 40°C < T
A
< +125°C
7 30 ppm/V
LOAD REGULATION ∆V
O
/∆I
LOAD
I
LOAD
= 0 mA to 10 mA, 40°C < T
A
< +125°C,
V
IN
= 7.0 V
40 70 ppm/mA
QUIESCENT CURRENT I
IN
No load, 40°C < T
A
< +125°C 0.65 1 mA
VOLTAGE NOISE e
N p-p
0.1 Hz to 10.0 Hz 10 µV p-p
VOLTAGE NOISE DENSITY e
N
1 kHz 510 nV/Hz
TURN-ON SETTLING TIME t
R
4 µs
LONG-TERM STABILITY
1
V
O
1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS V
O_HYS
70 ppm
RIPPLE REJECTION RATIO RRR f
IN
= 10 kHz 75 dB
SHORT CIRCUIT TO GND I
SC
30 mA
TEMPERATURE SENSOR
Voltage Output at TEMP Pin
V
TEMP
550
mV
Temperature Sensitivity TCV
TEMP
1.96 mV/°C
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.