Datasheet

OP295/OP495
Rev. G | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
30 300 µV
−40°C ≤ T
A
≤ +125°C 800 µV
Input Bias Current I
B
8 20 nA
−40°C ≤ T
A
≤ +125°C 30 nA
Input Offset Current I
OS
±1 ±3 nA
−40°C ≤ T
A
≤ +125°C ±5 nA
Input Voltage Range V
CM
0 4.0 V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
≤ 4.0 V, −40°C ≤ T
A
≤ +125°C 90 110 dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ, 0.005 ≤ V
OUT
≤ 4.0 V 1000 10,000 V/mV
R
L
= 10 kΩ, −40°C ≤ T
A
≤ +125°C 500 V/mV
Offset Voltage Drift ∆V
OS
/∆T 1 5 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
R
L
= 100 kΩ to GND 4.98 5.0 V
R
L
= 10 kΩ to GND 4.90 4.94 V
I
OUT
= 1 mA, −40°C ≤ T
A
≤ +125°C 4.7 V
Output Voltage Swing Low V
OL
R
L
= 100 kΩ to GND 0.7 2 mV
R
L
= 10 kΩ to GND 0.7 2 mV
I
OUT
= 1 mA, −40°C ≤ T
A
≤ +125°C 90 mV
Output Current I
OUT
±11 ±18 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±1.5 V ≤ V
S
≤ ±15 V 90 110 dB
±1.5 V ≤ V
S
≤ ±15 V, –40°C ≤ T
A
≤ +125°C 85 dB
Supply Current per Amplifier I
SY
V
OUT
= 2.5 V, R
L
= ∞, −40°C ≤ T
A
≤ +125°C 150 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θ
O
86 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 1.5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 51 nV/√Hz
Current Noise Density i
n
f = 1 kHz <0.1 pA/√Hz
V
S
= 3.0 V, V
CM
= 1.5 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
100 500 µV
Input Bias Current I
B
8 20 nA
Input Offset Current I
OS
±1 ±3 nA
Input Voltage Range V
CM
0 2.0 V
Common-Mode Rejection Ration CMRR 0 V ≤ V
CM
≤ 2.0 V, −40°C ≤ T
A
≤ +125°C 90 110 dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ 750 V/mV
Offset Voltage Drift V
OS
/T 1 µV/°C