Datasheet
Table Of Contents
- FEATURES
- APPLICATIONS
- GENERAL DESCRIPTION
- PIN CONFIGURATIONS
- TABLE OF CONTENTS
- REVISION HISTORY
- SPECIFICATIONS
- ABSOLUTE MAXIMUM RATINGS
- TYPICAL PERFORMANCE CHARACTERISTICS
- APPLICATIONS
- RAIL-TO-RAIL APPLICATION INFORMATION
- LOW DROP-OUT REFERENCE
- LOW NOISE, SINGLE-SUPPLY PREAMPLIFIER
- DRIVING HEAVY LOADS
- DIRECT ACCESS ARRANGEMENT
- SINGLE-SUPPLY INSTRUMENTATION AMPLIFIER
- SINGLE-SUPPLY RTD THERMOMETER AMPLIFIER
- COLD JUNCTION COMPENSATED, BATTERY-POWERED THERMOCOUPLE AMPLIFIER
- 5 V ONLY, 12-BIT DAC THAT SWINGS 0 V TO 4.095 V
- 4 mA TO 20 mA CURRENT-LOOP TRANSMITTER
- 3 V LOW DROPOUT LINEAR VOLTAGE REGULATOR
- LOW DROPOUT, 500 mA VOLTAGE REGULATOR WITH FOLDBACK CURRENT LIMITING
- SQUARE WAVE OSCILLATOR
- SINGLE-SUPPLY DIFFERENTIAL SPEAKER DRIVER
- HIGH ACCURACY, SINGLE-SUPPLY, LOW POWER COMPARATOR
- OUTLINE DIMENSIONS
OP295/OP495
Rev. G | Page 4 of 16
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
R
L
= 10 kΩ to GND 2.9 V
Output Voltage Swing Low V
OL
R
L
= 10 kΩ to GND 0.7 2 mV
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±1.5 V ≤ V
S
≤ ±15 V 90 110 dB
±1.5 V ≤ V
S
≤ ±15 V, −40°C ≤ T
A
≤ +125°C 85 dB
Supply Current per Amplifier I
SY
V
OUT
= 1.5 V, R
L
= ∞, −40°C ≤ T
A
≤ +125°C 150 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θ
O
85 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 1.6 µV p-p
Voltage Noise Density e
n
f = 1 kHz 53 nV/√Hz
Current Noise Density i
n
f = 1 kHz <0.1 pA/√Hz
V
S
= ±15.0 V, T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
300 500 µV
−40°C ≤ T
A
≤ +125°C 800 µV
Input Bias Current I
B
V
CM
= 0 V 7 20 nA
V
CM
= 0 V, −40°C ≤ T
A
≤ +125°C 30 nA
Input Offset Current I
OS
V
CM
= 0 V ±1 ±3 nA
V
CM
= 0 V, −40°C ≤ T
A
≤ +125°C ±5 nA
Input Voltage Range V
CM
−15 +13.5 V
Common-Mode Rejection Ratio CMRR −15.0 V ≤ V
CM
≤ +13.5 V, −40°C ≤ T
A
≤ +125°C 90 110 dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ 1000 4000 V/mV
Offset Voltage Drift ∆V
OS
/∆T 1 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
R
L
= 100 kΩ to GND 14.95 V
R
L
= 10 kΩ to GND 14.80 V
Output Voltage Swing Low V
OL
R
L
= 100 kΩ to GND −14.95 V
R
L
= 10 kΩ to GND −14.85 V
Output Current I
OUT
±15 ±25 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ±1.5 V to ±15 V 90 110 dB
V
S
= ±1.5 V to ±15 V, −40°C ≤ T
A
≤ +125°C 85 dB
Supply Current per Amplifier I
SY
V
O
= 0 V, R
L
= ∞, V
S
= ±18 V, −40°C ≤ T
A
≤ +125°C 175 µA
Supply Voltage Range V
S
3 (± 1.5) 36 (± 18) V
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 85 kHz
Phase Margin θ
O
83 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 1.25 µV p-p
Voltage Noise Density e
n
f = 1 kHz 45 nV/√Hz
Current Noise Density i
n
f = 1 kHz <0.1 pA/√Hz