Datasheet

REV.
–2–
OP777/OP727/OP747–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage OP777 V
OS
+25 C < T
A
< +85 C 20 100 μV
–40°C < T
A
< +85 °C 50 200 μV
Offset Voltage OP727/OP747 +25 C < T
A
< +85 C 30 160 μV
–40°C < T
A
< +85 °C 60 300 μV
Input Bias Current I
B
–40°C < T
A
< +85 °C 5.5 11 nA
Input Offset Current I
OS
–40°C < T
A
< +85 °C 0.1 2 nA
Input Voltage Range 0 4 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 4 V 104 110 dB
Large Signal Voltage Gain A
VO
R
L
= 10 k Ω, V
O
= 0.5 V to 4.5 V 300 500 V/mV
Offset Voltage Drift OP777 ΔV
OS
/ΔT –40°C < T
A
< +85 °C 0.3 1.3 μV/°C
Offset Voltage Drift OP727/OP747 ΔV
OS
/ΔT –40°C < T
A
< +85 °C 0.4 1.5 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
L
= 1 mA, –40 °C to +85 °C 4.88 4.91 V
Output Voltage Low V
OL
I
L
= 1 mA, –40 °C to +85 °C 126 140 mV
Output Circuit I
OUT
V
DROPOUT
< 1 V ±10 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 3 V to 30 V 120 130 dB
Supply Current/Amplifier OP777 I
SY
V
O
= 0 V 220 270 μA
–40°C < T
A
< +85 °C 270 320 μA
Supply Current/Amplifier OP727/OP747 V
O
= 0 V 235 290 μA
–40°C < T
A
< +85 °C 290 350 μA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 k Ω 0.2 V/μs
Gain Bandwidth Product GBP 0.7 MHz
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.4 μV p-p
Voltage Noise Density e
n
f = 1 kHz 15 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.13 pA/√Hz
NOTES
Typical specifications: >50% of units perform equal to or better than the “typical” value.
Specifications subject to change without notice.
(@ V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25C unless otherwise noted.)
D