Datasheet

REV.
–3–
OP777/OP727/OP747
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage OP777 V
OS
+25 °C < T
A
< +85 °C 30 100 μV
–40°C < T
A
< +85 °C 50 200 μV
Offset Voltage OP727/OP747 V
OS
+25 °C < T
A
< +85 °C 30 160 μV
–40°C < T
A
< +85 °C 50 300 μV
Input Bias Current I
B
–40°C < T
A
< +85 °C510nA
Input Offset Current I
OS
–40°C < T
A
< +85 °C 0.1 2 nA
Input Voltage Range –15 +14 V
Common-Mode Rejection Ratio CMRR V
CM
= –15 V to +14 V 110 120 dB
Large Signal Voltage Gain A
VO
R
L
= 10 k Ω, V
O
= –14.5 V to +14.5 V 1,000 2,500 V/mV
Offset Voltage Drift OP777 ΔV
OS
/ΔT –40°C < T
A
< +85 °C 0.3 1.3 μV/°C
Offset Voltage Drift OP727/OP747 ΔV
OS
/ΔT –40°C < T
A
< +85 °C 0.4 1.5 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
L
= 1 mA, –40 °C to +85 °C +14.9 +14.94 V
Output Voltage Low V
OL
I
L
= 1 mA, –40 °C to +85 °C –14.94 –14.9 V
Output Circuit I
OUT
±30 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ± 1.5 V to ± 15 V 120 130 dB
Supply Current/Amplifier OP777 I
SY
V
O
= 0 V 300 350 μA
–40°C < T
A
< +85 °C 350 400 μA
Supply Current/Amplifier OP727/747 V
O
= 0 V 320 375 μA
–40°C < T
A
< +85 °C 375 450 μA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 k Ω 0.2 V/μs
Gain Bandwidth Product GBP 0.7 MHz
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.4 μV p-p
Voltage Noise Density e
n
f = 1 kHz 15 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.13 pA/√Hz
Specifications subject to change without notice.
(@ 15 V, V
CM
= 0 V, T
A
= 25C unless otherwise noted.)
D