Datasheet

ST72334J/N, ST72314J/N, ST72124J
122/153
16.6 MEMORY CHARACTERISTICS
16.6.1 RAM and Hardware Registers
16.6.2 EEPROM Data Memory
16.6.3 FLASH Program Memory
Notes:
1. Minimum V
DD
supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Data based on characterization results, tested in production at T
A
=25°C.
3. Up to 16 bytes can be programmed at a time for a 4kBytes FLASH block (then up to 32 bytes at a time for an 8k device)
4. The data retention time increases when the T
A
decreases.
5. Data based on reliability test results and monitored in production.
Symbol Parameter Conditions Min Typ Max Unit
V
RM
Data retention mode
1)
HALT mode (or RESET) 1.6 V
Symbol Parameter Conditions Min Typ Max Unit
t
prog
Programming time for 1~16 bytes
3)
-40°C≤T
A
≤+85°C 20
ms
-40°C≤T
A
≤+125°C 25
t
ret
Data retention
5)
T
A
=+55°C
4)
20 Years
N
RW
Write erase cycles
5)
T
A
=+25°C 300 000 Cycles
Symbol Parameter Conditions Min Typ Max Unit
T
A(prog)
Programming temperature range
2)
02570
°C
t
prog
Programming time for 1~16 bytes
3)
T
A
=+25°C 8 25
ms
Programming time for 4 or 8kBytes
T
A
=+25°C 2.1 6.4
sec
t
ret
Data retention
5)
T
A
=+55°C
4)
20 years
N
RW
Write erase cycles
5)
T
A
=+25°C 100 cycles