Specifications

ST72104Gx, ST72215Gx, ST72216Gx, ST72254Gx
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13.6 MEMORY CHARACTERISTICS
Subject to general operating conditions for V
DD
, f
OSC
, and T
A
unless otherwise specified.
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
Notes:
1. Minimum V
DD
supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Data based on characterization results, tested in production at T
A
=25°C.
3. Up to 16 bytes can be programmed at a time for a 4kBytes FLASH block (then up to 32 bytes at a time for an 8k device)
4. The data retention time increases when the T
A
decreases.
5. Data based on reliability test results and monitored in production.
Symbol Parameter Conditions Min Typ Max Unit
V
RM
Data retention mode
1)
HALT mode (or RESET) 1.6 V
Symbol Parameter Conditions Min Typ Max Unit
T
A(prog)
Programming temperature range
2)
0 25 70
°C
t
prog
Programming time for 1~16 bytes
3)
T
A
=+25°C 8 25
ms
Programming time for 4 or 8kBytes
T
A
=+25°C 2.1 6.4
sec
t
ret
Data retention
5)
T
A
=+55°C
4)
20 years
N
RW
Write erase cycles
5)
T
A
=+25°C 100 cycles