Datasheet
CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Features
■ RoHS compliant*
■ SMA package
■ Surface mount
■ Very low forward voltage drop
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which offer PCB
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 2 A with a
choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns
®
Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Parameter Symbol
CD214A-
Unit
B220 B230 B240 B240L B250 B260
Forward Voltage (Max.)
V
F
0.5 0.5 0.5 0.43 0.7 0.7 V
(I
f
= 2 A)
Typical Junction
C
T
200 pF
Capacitance*
Reverse Current (Max.)
I
R
0.5 0.5 0.5 2.0 0.5 0.5 mA
at Rated V
R
)
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
How To Order
CD 214A - B 2 40 L LF
Common Code
Chip Diode
Package
• 214A = SMA/DO-214AC
Model
B = Schottky Barrier Series
Average Forward Current (I
o
) Code
2 = 2 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (V
R
) Code
30 = 30 V
40 = 40 V
60 = 60 V
Forward Voltage Suffix (Applies to B240L only)
L = Low Forward Voltage V
f
(B240L only)
No Space in P/N = Not Low Forward Voltage
Terminations
LF = 100 % Sn (RoHS Compliant)
Absolute Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol
CD214A-
Unit
B220 B230 B240 B240L B250 B260
Repetitive Peak
V
RRM
20 30 40 40 50 60 V
Reverse Voltage
Reverse Voltage V
R
20 30 40 40 50 60 V
Maximum RMS Voltage V
RMS
14 21 28 28 35 42 V
Avg. Forward Current I
O
2A
Forward Current,
Surge Peak I
surge
50 50 50 25 50 50 A
(60 Hz, 1 cycle)
Typical Thermal
R
ΘJL
15 15 15 18 15 15 °C/W
Resistance**
Storage Temperature T
STG
-55 to +150 °C
Junction Temperature T
J
-55 to +125 °C
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
** Thermal resistance junction to lead.
*RoHS COMPLIANT
*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.