Datasheet

TlC206
SERIES
SILICON TRIACS
Copyright
0
1997,
Power
Innovalions
Limited,
UK
DECEMBER
1971-
REViSED
MARCH
1997
Sensitive Gate
Triacs
4 A RMS
Glass Passivated Wafer
400 V to800
V Off-State Voltage
Max
1~~
of 5
mA (Quadrants 1
-
3)
10-220
PACKAQE
(TOP
VIEW)
Pin
2
is
in
electrical
contact
with
the
mounting
base.
MDCPACA
absolute maxlmum ratings over operatlng
case
temperature (unless othetwlse noted)
Repetilive
peak
off-state
voiiage
(see
Note
1)
NOTE
S:
1.
These
vaiues
appiy
bidireclionaily
for
any
vaiue
of
resislance
belween
lhe
gate
and
Main
Terminal
1.
2.
Thls
value
applles
for
50-Hz
full-sine-wave
operatlon
wllh
reslstlve
load.
Above
65°C
derate
iinearly
to
110°C
case
temperalure
at
lhe
rate
of
160
mAPC.
3.
Thls
value
applles
for
one
50-Hz
fuli-sine-wave
when
lhe
devke
is
operatlng
at
(or
below)
lhe
rated
value
of
on-stale
currenl.
Surge
may
be
rspealed
afler
lhe
device
has
relumed
10
original
lhenal
equlllbrium.
Durfng
lhe
surge,
gale
conlrol
may
be
lost.
4.
Thls
value
appfies
for
one
50-Hz
hai-sine-wave
when
lhe
device
1s
operatlng
at
(or
below)
lhe
raled
value
of
on-stale
currenl.
Surge
may
be
repeated
afler
lhe
devlce
has
relumed
10
original
thermal
equlllbrium.
Durtng
lhe
surge.
gate
conlrol
may
be
lost.
5.
This
value
applies
for
a
maximum
averaging
lime
of
20
ms.
electrical characteristics at 25°C
case
temperature (unless otherwise noted)
PARAMETER
bRt.4
Repetilive
peak
off-slale
currenl
Vo
=
raled
V~RM
Vsuw~
=
+12
vt
V
IGTM
Peak
gate
ltigger
Spply
=
+12
vt
currenl
V
st@y
=
-12
vt
V
supp,y
=
-12
vt
V
ww~
=
+12
vt
Peak
gale
lrlgger
V
GTM
wpp,y
=
+12
vt
Vollage
V
wpq,y
=
-12
vt
V
slJ@y
=
-12
vt
t
All
vollages
arc
wilh
respecl
10
Main
Teninal
1.
TEST CONDITIONS
MIN
TYP
IG
=
0
TC
=
110°C
RL=lOIl
bw
20
PS
0.5
-1.5
RL=lOQ
bw
20
ps
RL=lOQ
p(g)
20
PS
-2
RL=lOR
lp<g>
20
PS
3.6
RL=lOfJ
l,(,)
20
Ps
0.7
RL=lOQ
P(g)
2o
p
-0.7
RL=lOR
p(g)
20
PS
-0.8
R,=lOn
lp(e)
20
Cs
0.6
MAX
UNiT
+
*1 mA
5
-5
-5
mA
10
t
2
-2
-2
V
2
_
.,
PR*DUC,
rniroRMAfjOiV
:.
.:
_
II.,_
..,
.I.““I.
.,**,,
power
_.-..-
-
-...-.
Information is
current
as of
publication
date.
Products
confon
Io
specificalions in accordance
INNOVATIONS
wilh the terms of Power Innovalions Standard
warranly.
Pmduction
processing
does
nOt
necessarily include lesting of
all
Parameters.

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