Datasheet
23
Figure 41. Large IGBT drive with negative gate drive, external booster. V
CLAMP
control secondary discharge path for higher power application.
Figure 40. IGBT drive with negative gate drive, external booster and desaturation detection (V
CLAMP
should be connected to V
EE
when it is not used)
VCLAMP is used as secondary gate discharge path. * indicates component required for negative gate drive topology
Pull-up Resistor on FAULT Pin
The FAULT pin is an open collector output and therefore
requires a pull-up resistor to provide a high-level signal.
Also the FAULT output can be wire ‘OR’ed together with
other types of protection (e.g. over-temperature, over-
voltage, over-current ) to alert the microcontroller.
Other Possible Application Circuit (Output Stage)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
E
V
LED
DESAT
V
CC2
V
EE
V
OUT
V
CLAMP
V
EE
V
S
V
CC1
FAULT
V
S
CATHODE
ANODE
ANODE
CATHODE
+
_
+
_
R
G
Q1
Q2
+
V
CE
-
R
PULL-DOWN
+ HVDC
- HVDC
3-PHASE
AC
+
V
CE
-
0.1µF 0.1µF
0.1µF
Optional R
1
Optional R
2
R
G
Optional R
1
Optional R
2
*
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
E
V
LED
DESAT
V
CC2
V
EE
V
OUT
V
CLAMP
V
EE
V
S
V
CC1
FAULT
V
S
CATHODE
ANODE
ANODE
CATHODE
+
_
+
_
R
G
Q1
Q2
+
V
CE
-
R
PULL-DOWN
+ HVDC
- HVDC
3-PHASE
AC
+
V
CE
-
0.1µF 0.1µF
0.1µF
Optional R
1
Optional R
2
R
3
9
R
G
Optional R
1
Optional R
2
R
3
*