Datasheet

6
Table 5. Electrical Specications (DC)
All typical values are at T
A
= 25 °C, V
CC
- V
EE
= 10 V, V
EE
= Ground. All minimum and maximum specications are at recom-
mended operating conditions (T
A
= -40 to 105 °C, I
F(ON)
= 7 to 11 mA, V
F(OFF)
= -3.6 to 0.8 V, V
EE
= Ground , V
CC
= 10 to
20 V), unless otherwise noted.
Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. Note
High Level Peak Output Current I
OH
-2.0 -3.4 A V
CC
– V
O
= 10 V 3, 4 5
Low Level Peak Output Current I
OL
2.0 4.4 A V
O
- V
EE
= 10 V 6, 7 5
High Output Transistor RDS(ON) R
DS,OH
0.3 1.7 3.5 Ω I
OH
= -2.0 A 8 6
Low Output Transistor RDS(ON) R
DS,OL
0.3 0.7 2.0 Ω I
OL
= 2.0 A 9 6
High Level Output Voltage V
OH
Vcc-0.3 Vcc – 0.2 V I
O
= -100 mA,
I
F
= 9 mA
2, 4 7, 8
High Level Output Voltage V
OH
Vcc V I
O
= 0 mA,
I
F
= 9 mA
1
Low Level Output Voltage V
OL
0.1 0.25 V I
O
= 100 mA 5, 7
High Level Supply Current I
CCH
2.6 4.0 mA I
F
= 9 mA 10,
11
Low Level Supply Current I
CCL
2.6 4.0 mA V
F
= 0V
Threshold Input Current
Low to High
I
FLH
0.5 1.5 4.0 mA V
O
> 5 V 12,
13
Threshold Input Voltage
High to Low
V
FHL
0.8 V
Input Forward Voltage V
F
1.2 1.55 1.95 V I
F
= 9 mA 19
Temperature Coecient
of Input Forward Voltage
ΔV
F
/ΔT
A
-1.7 mV/°C
Input Reverse Breakdown
Voltage
BV
R
5 V I
R
= 100 mA
Input Capacitance C
IN
70 pF f = 1 MHz, V
F
= 0 V
UVLO Threshold V
UVLO+
8.1 8.6 9.1 V V
O
> 5 V, I
F
= 9 mA
V
UVLO-
7.1 7.6 8.1
UVLO Hysteresis UVLO
HYS
0.5 1.0 V