Datasheet
3
Part Numbering System
Note:
1. For selection details, see page 8.
ASMT-M x xx – x x
1
x
2
x
3
x
4
Packaging Option
Color
R – Red
A – Amber
G - Green
B - Blue
Color Bin Selection
Maximum Flux Bin Selection
Minimum Flux Bin Selection
Dice Type
N – InGaN
A – AllnGaP
Silicone Type
00 – Non-diused
Absolute Maximum Ratings (T
A
= 25 °C)
Parameter AllnGaP InGaN Units
DC Forward Current
[1]
350 350 mA
Peak Pulsing Current
[2]
1000 1000 mA
Power Dissipation 805 1225 mW
LED Junction Temperature 125 110
°C
Operating Ambient Temperature Range at 350 mA -40 to +115 -40 to +100
°C
Storage Temperature Range -40 to +120 -40 to +120
°C
Soldering Temperature See Figure 17
Reverse Volttage
[3]
Not recommended
Notes:
1. DC forward current – derate linearly based on Figure 5 for AlInGaP and Figure 13 for InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1 kHz.
3. Not recommended for reverse bias operation.