Datasheet

ManualsBrandsBROADCOM ManualsHighPower-LEDsHighPower LED Red 1 W 40 lm 120 ° 2.4 V 350 mA

Description

The Moonstone

1W Power LED Light Source is a high

performance energy ecient device which can handle

high thermal and high driving current. The exposed pad

design has excellent heat transfer from the package to

the motherboard.

The low prole package design is suitable for a wide

variety of applications especially where height is a

constraint.

The package is compatible with reow soldering

process. This will give more freedom and exibility to

the light source designer.

Applications

• Portable (ash light, bicycle head light)

• Reading light

• Architectural lighting

• Garden lighting

• Decorative lighting

ASMT-Mx00

Moonstone

1 W Power LED Light Source

Data Sheet

Features

• Available in Red, Amber, Green, and Blue color.

• Energy ecient

• Exposed pad for excellent heat transfer

• Suitable for reow soldering process

• High current operation

• Long operation life

• Wide viewing angle

• Silicone encapsulation

• ESD Class HBM Class 3B (threshold > 8 kV)

• MSL 2A for InGaN products

• MSL 4 for AlInGaP products

Specications

• AllnGaP technology for Red and Amber

• 2.1V (typ) at 350mA for AllnGaP

• InGaN technology for Green and Blue

• 3.2V (typ) at 350mA for InGaN

Summary of content (11 pages)

PAGE 1
ASMT-Mx00 MoonstoneTM 1 W Power LED Light Source Data Sheet Description Features The Moonstone 1W Power LED Light Source is a high performance energy efficient device which can handle high thermal and high driving current. The exposed pad design has excellent heat transfer from the package to the motherboard. TM The low profile package design is suitable for a wide variety of applications especially where height is a constraint. The package is compatible with reflow soldering process.
PAGE 2
Package Dimensions 10.00 1 Anode 2 Cathode 3 Heat Sink 3.30 8.50 1.27 Metal Slug 3 Ø 5.26 LED 10.60 8.50 + − Ø 8.00 2.00 ZENER 5.25 1.30 2 1 5.08 0.81 Notes: 1. All dimensions are in millimeters. 2. Tolerance is ±0.1 mm, unless otherwise specified. 3. Metal slug is connected to anode for electrically non-isolated option. Device Selection Guide ( Tj = 25 °C) Luminous Flux, fV[1,2] (lm) Part Number Color Min. Typ. Max. Test Current (mA) Dice Technology ASMT-MR00-AHJ00 Red 33.0 40.
PAGE 3
Part Numbering System ASMT-M x xx – x x1 x2 x3 x4 Packaging Option Color Bin Selection Maximum Flux Bin Selection Minimum Flux Bin Selection Dice Type N – InGaN A – AllnGaP Silicone Type 00 – Non-diffused Color R – Red A – Amber G - Green B - Blue Note: 1. For selection details, see page 8.
PAGE 4
Optical Characteristics at 350 mA (TJ = 25 °C) Peak Wavelength, λPEAK (nm) Dominant Wavelength, λD [1] (nm) Viewing Angle, 2θ½ [2] (°) Luminous Efficiency (lm/W) Part Number Color Typ. Typ. Typ. Typ.
PAGE 5
400 350 350 MAX ALLOWABLE DC CURRENT - mA 400 300 250 Rθ J-A = 30 ° C/W Rθ J-A = 40 ° C/W Rθ J-A = 50 ° C/W 200 150 100 50 0 0 25 50 75 100 125 AMBIENT TEMPERATURE, TA - °C FORWARD VOLTAGE SHIFT - V (NORMALIZED AT 25 °C) Figure 5. Maximum forward current vs. ambient temperature for AlInGaP Derated based on TJMAX = 125 °C, RθJ-A = 30 °C/W, 40 °C/W and 50 °C/W 0.10 0.05 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -0.40 50 75 100 JUNCTION TEMPERATURE, TJ - °C Figure 7. Forward voltage shift vs.
PAGE 6
InGaN 1.0 NORMALIZED INTENSITY RELATIVE LUMINOUS FLUX (NORMALIZED AT 350 mA) 1.2 0.8 0.6 0.4 0.2 0 0 50 100 150 200 250 300 DC FORWARD CURRENT - mA Figure 11. Relative Luminous Flux vs. Mono Pulse Current for InGaN 350 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -90 -60 -30 0 30 60 ANGULAR DISPLACEMENT - DEGREES Figure 12.
PAGE 7
10.70 ± 0.10 TEMPERATURE 10 - 30 SEC. 217 °C 200 °C 255 - 260 °C 3 °C/SEC. MAX. 17.00 ± 0.20 3 °C/SEC. MAX. 60 - 120 SEC. 1.00 ± 0.10 100 SEC. MAX. TIME (Acc. to J-STD-020C) Figure 17. Recommended reflow soldering profile 7 8.40 ± 0.10 -6 °C/SEC. MAX. 3.1 ± 0.10 5.08 ± 0.10 Figure 18.
PAGE 8
Option Selection Details ASMT-Mxxx – x x1 x2 x3 x4 x1 – Minimum Flux Bin Selection x2 – Maximum Flux Bin Selection x3 – Color Bin Selection x4 – Packaging Option Flux Bin Limit [x1 x2] Bin Luminous Flux (lm) at IF = 350mA Min. Max. D 11.5 15.0 E 15.0 19.5 F 19.5 25.5 G 25.5 33.0 H 33.0 43.0 J 43.0 56.0 K 56.0 73.0 L 73.0 95.0 M 95.0 124.0 Tolerance for each bin limits is ±10% Color Bin Selection [x3] Individual reel will contain parts from one full bin only.
PAGE 9
Example Packaging option [x4] Selection Option ASMT-MR00-AHJ00 0 Tube 1 Tape & Reel ASMT-MR00-Axxxx x1 = H x2 = J x3 = 0 x4 = 0 – – – – – AllnGaP Red, Non-diffused Minimum Flux Bin H Maximum Flux Bin J Full Distribution Tube Option Packing Tube - Option 0 5.39 10.3 37.00 6.5 20.85 11.00 10.95 6.3 8.3 535.00 SIDE VIEW TOP VIEW Figure 19. Tube dimensions Tape & Reel - Option 1 Tape Dimension B Bo W F E A 2.5 B A Ko P SECTION A Ao SECTION B Figure 20.
PAGE 10
Tape & Reel - Option 1 (Cont.) Tape Dimension END START THERE SHALL BE A MINIMUM OF 160 mm OF EMPTY COMPONENT POCKETS SEALED WITH COVER TAPE. MOUNTED WITH COMPONENTS THERE SHALL BE A MINIMUM OF 390 mm OF EMPTY COMPONENT POCKETS SEALED WITH COVER TAPE. Figure 21. Carrier tape leader and trailer dimensions Reel Dimensions +1.00 24.0 −0.00 2.30 2.30 0 2.50 ± 0.50 0º 60. ∅99.50 ± 1.00 R10.0 ± .50 ∅268.00 R10 ∅13.50 ∅330.00 ± 1.00 Figure 22. Reel dimensions 0 0.5 120.0º ± 0.
PAGE 11
Handling Precaution The encapsulation material of the product is made of silicone for better reliability of the product. As silicone is a soft material, please do not press on the silicone or poke a sharp object onto the silicone. These might damage the product and cause premature failure. During assembly or handling, the unit should be held on the body only. Please refer to Avago Application Note AN5288 for detail information. B. Control after opening the MBB Moisture Sensitivity C.