Datasheet

10
Electrical Specications (DC)
Over recommended temperature (T
A
= 0°C to 70°C) unless otherwise specied. See note 13.
Parameter Symbol Device Min. Typ.** Max. Units Test Conditions Fig. Note
Current
Transfer Ratio
CTR* 6N135
HCPL-0500
HCNW135
7 18 50 % T
A
= 25°C V
O
= 0.4 V I
F
= 16 mA,
V
CC
= 4.5 V
1, 2,
4
5, 11
5 19 V
O
= 0.5 V
HCPL-2502 15 22 T
A
= 25°C V
O
= 0.4 V
15 25 V
O
= 0.5 V
6N136
HCPL-4502/3
HCPL-0501
HCPL-0452/3
HCNW136
HCNW4502/3
19 24 50 T
A
= 25°C V
O
= 0.4 V
15 25 V
O
= 0.5 V
Logic Low
Output Voltage
V
OL
6N135
HCPL-0500
HCNW135
0.1 0.4 V T
A
= 25°C I
O
= 1.1 mA I
F
= 16 mA,
V
CC
= 4.5 V
0.1 0.5 I
O
= 0.8 mA
6N136
HCPL-2502
HCPL-4502/3
HCPL-0501
HCPL-0452/3
HCNW136
HCNW4502/3
0.1 0.4 T
A
= 25°C I
O
= 3.0 mA
0.1 0.5 I
O
= 2.4 mA
Logic High
Output Current
I
OH
* 0.003 0.5 µA T
A
= 25°C V
O
= V
CC
= 5.5 V I
F
= 0 mA 7
0.01 1 T
A
= 25°C V
O
= V
CC
= 15 V
50 V
O
= V
CC
= 15 V
Logic Low
Supply Current
I
CCL
50 200 µA I
F
= 16 mA, V
O
= Open,
V
CC
= 15 V
13
Logic High
Supply Current
I
CCH
* 0.02 1 µA T
A
= 25°C I
F
= 16 mA,
V
O
= Open,
13
2 V
CC
= 15 V
Input Forward V
F
*
Voltage
8-Pin DIP 1.5 1.7 V T
A
= 25°C I
F
= 16 mA 3
SO-8 1.8
Widebody 1.45 1.68 1.85 T
A
= 25°C I
F
= 16 mA
1.35 1.95
Input Reverse
Breakdown
Voltage
BV
R
* 8-Pin DIP 5 V I
R
= 10 µA
SO-8
Widebody 3 I
R
= 100
µA
Temperature
Coecient of
Forward Volt-
age
∆V
F
/
∆T
A
8-Pin DIP -1.6 mV/°C I
F
= 16 mA
SO-8
Widebody -1.9
Input
Capacitance
C
IN
8-Pin DIP 60 pF f = 1 MHz, V
F
= 0 V
SO-8
Widebody 90
Transistor DC
Current Gain
h
FE
8-Pin DIP 150 V
O
= 5 V, I
O
= 3 mA
SO-8 130 V
O
= 0.4 V, I
B
= 20 µA
Widebody 180 V
O
= 0.4 V, I
B
= 20 µA
160 V
O
= 5 V, I
O
= 3 mA
*For JEDEC registered parts.
**All typicals at T
A
= 25°C.