6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
50MT060WHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP (Warp Speed IGBT), 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery RoHS COMPLIANT • Very low conduction and switching losses • Optional SMD thermistor (NTC) • Very low junction to case thermal resistance • ULE78996 approved MTP • Operating frequency 60 to 100 kHz • Totally lead (Pb)-free • Designed and qualified for industrial level BENEFITS PRODUCT SUMMARY VCES 60
50MT060WHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP (Warp Speed IGBT), 114 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Collector to emitter voltage Gate threshold voltage Collector to emitter leaking current VCE(on) VGE(th) ICES MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 µA TEST CONDITIONS 600 - - V VGE = 15 V, IC = 50 A - 2.3 3.15 VGE = 15 V, IC = 100 A - 2.5 3.
50MT060WHTAPbF "Half-Bridge" IGBT MTP Vishay High Power Products (Warp Speed IGBT), 114 A THERMISTOR SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS Resistance SYMBOL R0 (1) T0 = 25 °C TEST CONDITIONS - 30 - kΩ Sensitivity index of the thermistor material β (1)(2) T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX.
0MT060WHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP (Warp Speed IGBT), 114 A 160 IF = 50 A, TJ = 125 °C IC = 100 A IC = 50 A 2.0 120 100 IF = 50 A, TJ = 25 °C 1.5 80 IC = 20 A 60 100 1.0 20 40 60 80 100 120 140 160 1000 TJ - Junction Temperature (°C) dIF/dt - (A/µs) Fig. 3 - Typical Collector to Emitter Voltage vs. Junction Temperature Fig. 6 - Typical Reverse Recovery Time vs.
50MT060WHTAPbF "Half-Bridge" IGBT MTP Vishay High Power Products (Warp Speed IGBT), 114 A 3, 4 3, 4 2 T 10 Ω 11 11 12 10 Ω 12 R 5, 6 1 5, 6 10 Ω 9 Thermistor option 9 10 10 Ω 10 7, 8 7, 8 Fig. 9 - Functional Diagram Fig.
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.