Manual

Document Number: 94468 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 06-May-08 1
"Half-Bridge" IGBT MTP
(Warp Speed IGBT), 114 A
50MT060WHTAPbF
Vishay High Power Products
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED
®
antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• ULE78996 approved
• Operating frequency 60 to 100 kHz
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
typical at V
GE
= 15 V 2.3 V
I
C
at T
C
= 25 °C 114 A
MTP
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 114
A
T
C
= 109 °C 50
Pulsed collector current I
CM
350
Peak switching current I
LM
350
Diode continuous forward current I
F
T
C
= 109 °C 34
Peak diode forward current I
FM
200
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation P
D
T
C
= 25 °C 658
W
T
C
= 100 °C 263