Manual

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Document Number: 94468
2 Revision: 06-May-08
50MT060WHTAPbF
Vishay High Power Products
"Half-Bridge" IGBT MTP
(Warp Speed IGBT), 114 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 500 µA 600 - - V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A - 2.3 3.15
V
V
GE
= 15 V, I
C
= 100 A - 2.5 3.2
V
GE
= 15 V, I
C
= 50 A, T
J
= 150 °C - 1.72 2.17
Gate threshold voltage V
GE(th)
I
C
= 0.5 mA 3 - 6
Collector to emitter leaking current I
CES
V
GE
= 0 V, I
C
= 600 A - - 0.4
mA
V
GE
= 0 V, I
C
= 600 A, T
J
= 150 °C - - 10
Diode forward voltage drop V
FM
I
F
= 50 A, V
GE
= 0 V - 1.58 1.80
VI
F
= 50 A, V
GE
= 0 V, T
J
= 150 °C - 1.49 1.68
I
F
= 100 A, V
GE
= 0 V, T
J
= 25 °C - 1.9 2.17
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 52 A
V
CC
= 400 V
V
GE
= 15 V
- 331 385
nCGate to emitter charge (turn-on) Q
ge
-4452
Gate to collector charge (turn-on) Q
gc
- 133 176
Turn-on switching loss E
on
Internal gate resistors (see electrical diagram)
I
C
= 50 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 µH
Energy losses include tail and diode reverse
recovery
-0.26-
mJTurn-off switching loss E
off
-1.2-
Total switching loss E
ts
-1.46-
Turn-on switching loss E
on
Internal gate resistors (see electrical diagram)
I
C
= 50 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 µH
Energy losses include tail and diode reverse
recovery, T
J
= 150 °C
-0.73-
mJTurn-off switching loss E
off
-1.66-
Total switching loss E
ts
-2.39-
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 mHz
- 7100 -
pFOutput capacitance C
oes
-510-
Reverse transfer capacitance C
res
-140-
Diode reverse recovery time t
rr
V
CC
= 200 V, I
C
= 50 A
dI/dt = 200 A/µs
-8297ns
Diode peak reverse current I
rr
- 8.3 10.6 A
Diode recovery charge Q
rr
- 340 514 nC
Diode reverse recovery time t
rr
V
CC
= 200 V, I
C
= 50 A
dI/dt = 200 A/µs
T
J
= 125 °C
- 137 153 ns
Diode peak reverse current I
rr
- 12.7 14.8 A
Diode recovery charge Q
rr
- 870 1132 nC