Manual

Document Number: 94468 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 06-May-08 3
50MT060WHTAPbF
"Half-Bridge" IGBT MTP
(Warp Speed IGBT), 114 A
Vishay High Power Products
Notes
(1)
T
0
, T
1
are thermistor´s temperatures
(2)
, temperature in Kelvin
Notes
(1)
Standard version only i.e. without optional thermistor
Fig. 1 - Typical Output Characteristics Fig. 2 - Maximum Collector Current vs. Case Temperature
THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R
0
(1)
T
0
= 25 °C - 30 - kΩ
Sensitivity index of the
thermistor material
β
(1)(2)
T
0
= 25 °C
T
1
= 85 °C
- 4000 - K
R
0
R
1
-------
β
1
T
0
------
1
T
1
------
–
⎝⎠
⎛⎞
exp=
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction
temperature range
IGBT, Diode
T
J
- 40 - 150
°CThermistor - 40 - 125
Storage temperature range T
Stg
- 40 - 125
Junction to case
IGBT
R
thJC
--0.38
°C/WDiode --0.8
Case to sink Module R
thCS
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance
(1)
External shortest distance in air between
two terminals
5.5 - -
mm
Creepage
(1)
Shortest distance along the external surface of the
insulating material between 2 terminals
8--
Mounting torque to heatsink
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g
1
100
10
I
C
- Collector to Emitter Current (A)
V
CE
- Collector to Emitter Voltage (V)
1.0
10
0.1
V
GE
= 15 V
20 µs pulse width
T
J
= 150 °C
T
J
= 25 °C
0
100
120
20
40
60
80
Maximum DC Collector Current (A)
T
C
- Case Temperature (°C)
50 75 100 125
150
25