Owner's manual

CM900DU-24NF
Mega Power Dual™ IGBTMOD
900 Amperes/1200 Volts
2 02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specied
Ratings Symbol CM900DU-24NF Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) V
CES
1200 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±20 Volts
Collector Current DC (T
C'
= 96°C)** I
C
900 Amperes
Peak Collector Current (T
j
≤ 150°C) I
CM
1800* Amperes
Emitter Current*** I
E
900 Amperes
Peak Emitter Current*** I
EM
1800* Amperes
Maximum Collector Dissipation (T
j
< 150°C) (T
C'
= 25°C) P
C
2550 Watts
Mounting Torque, M6 Mounting Screws – 40 in-lb
Mounting Torque, M6 Main Terminal Screw – 40 in-lb
Weight (Typical) – 1400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
Static Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 1.0 μA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 90mA, V
CE
= 10V 6 7 8 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 900A, V
GE
= 15V, T
j
= 25°C – 1.8 2.5 Volts
(Without Lead Resistance) (Chip) I
C
= 900A, V
GE
= 15V, T
j
= 125°C – 2.0 – Volts
Module Lead Resistance R
(lead)
I
C
= 900A, Terminal-chip – 0.143 – mΩ
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 900A, V
GE
= 15V – 4800 – nC
Emitter-Collector Voltage*** V
EC
I
E
= 900A, V
GE
= 0V – – 3.2 Volts
Dynamic Electrical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 140 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 16 nF
Reverse Transfer Capacitance C
res
– – 3 nF
Inductive Turn-on Delay Time t
d(on)
V
CC
= 600V, – – 600 ns
Load Rise Time t
r
I
C
= 900A, I
E
= 900A, – – 200 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, – – 800 ns
Times Fall Time t
f
R
G
= 0.35Ω, – – 300 ns
Diode Reverse Recovery Time*** t
rr
Inductive Load – – 500 ns
Diode Reverse Recovery Charge*** Q
rr
Switching Operation – 50 – μC
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** T
C’
measurement points is just under the chips. If this value is used, R
th(f-a)
should be measured just under the chips.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).