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CPV363M4KPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) FEATURES OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE • Short circuit rated ultrafast: Optimized for high speed over 5.0 kHz (see fig. 1 for current vs.
CPV363M4KPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface SYMBOL TYP. MAX. UNITS RthJC (IGBT) - 3.5 RthJC (DIODE) - 5.5 RthCS (MODULE) 0.10 - 20 - g 0.7 - oz.
CPV363M4KPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 61 91 VCC = 400 V See fig. 8 - 7.4 11 - 27 40 TJ = 25 °C IC = 6.0 A, VCC = 480 V VGE = 15 V, RG = 23 Energy losses include “tail” and diode reverse recovery See fig.
CPV363M4KPbF www.vishay.com Vishay Semiconductors 3.50 12 Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 2.92 8 2.33 6 1.75 4 1.17 2 0.58 Total Output Power (kW) LOAD CURRENT (A) 10 0.00 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 12 TJ = 25 oC TJ = 150 oC 10 1 0.
CPV363M4KPbF www.vishay.com Vishay Semiconductors Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 P DM 0.02 0.01 0.1 t 1 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 2 2 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 1500 Total Switching Losses (mJ) 1200 C, Capacitance (pF) 1.
CPV363M4KPbF www.vishay.com Vishay Semiconductors 100 1.5 I , Collector-to-Emitter Current (A) 0.9 0.6 0.3 VGE = 20V TJ = 125°C SAFE OPERATING AREA 10 C Total Switching Losses (mJ) R G = 23 Ω T J = 150 °C 480V VCC = 0V 1.2 VGE = 15V 0.0 A 1 0 3 6 9 12 15 1 IC , Collector-to-emitter Current (A) 10 100 1000 VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig.
CPV363M4KPbF www.vishay.com Vishay Semiconductors 600 160 VR= 200V TJ = 125°C TJ = 25°C VR= 200V TJ = 125°C TJ = 25°C 120 400 Q RR - (nC) t rr - (ns) IF = 24A I F = 12A 80 I F = 6.0A I F = 24A I F = 12A 200 40 IF = 6.0A 0 100 di f /dt - (A/µs) 0 100 1000 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dIF/dt Fig. 14 - Typical Reverse Recovery Time vs.
CPV363M4KPbF www.vishay.com Vishay Semiconductors GATE VOLTAGE D.U.T. 10% +Vg +Vg Same type device as D.U.T. DUT VOLTAGE AND CURRENT Vce 80 % of VCE 430 µF Vcc 10% Ic Ipk 90% Ic Ic D.U.T. 5% Vce tr td(on) t2 Eon = Vce VceieIcdt dt t1 ∫ t1 Fig. 18a - Test Circuit for Measurements of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t2 Fig. 18c - Test Waveforms for Circuit of Fig.
CPV363M4KPbF www.vishay.com Vishay Semiconductors D.U.T. L 1000 V RL = VC 480 V 4 x IC at 25 °C 0 - 480 V 6000 µF 100 V 50 V Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 3 Q1 D1 9 Q3 D3 4 6 Q2 D2 7 12 15 Q5 D5 10 Q4 D4 13 18 16 Q6 D6 19 LINKS TO RELATED DOCUMENTS Dimensions Revision: 11-Jun-13 www.vishay.
Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.
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