Manual

CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
4
Document Number: 94485
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1 1 10 100
0
2
4
6
8
10
12
f, Frequency (KHz)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
Total Output Power (kW)
2.92
2.33
1.75
1.17
0.58
0.00
3.50
0.1
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20μs PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
0.1
1
10
100
5 10 15
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5μs PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
0
3
6
9
12
25 50 75 100 125 150
Maximum DC Collector Current (A)
T , Case Temperature (°C)
C
V = 15V
GE
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A12
C
I = A6
C
I = A3
C