Owner's manual

Document Number: 94488 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 01-Sep-08 3
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 13 A
V
CC
= 400 V
V
GE
= 15 V
See fig. 8
- 110 170
nCGate to emitter charge (turn-on) Q
ge
-1421
Gate to collector charge (turn-on) Q
gc
-4974
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 13 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 10 Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
-50-
ns
Rise time t
r
-30-
Turn-off delay time t
d(off)
- 110 170
Fall time t
f
- 91 140
Turn-on switching loss E
on
-0.56-
mJTurn-off switching loss E
off
-0.28-
Total switching loss E
ts
- 0.84 1.1
Short circuit withstand time t
sc
V
CC
= 360 V,T
J
= 125 °C
V
GE
= 15 V, R
G
= 10 Ω, V
CPK
< 500 V
10 - - µs
Turn-on delay time t
d(on)
T
J
= 150 °C, see fig. 9, 10, 11, 18
I
C
= 13 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 10 Ω
Energy losses include “tail” and
diode reverse recovery
-47-
ns
Rise time t
r
-30-
Turn-off delay time t
d(off)
- 250 -
Fall time t
f
- 150 -
Total switching loss E
ts
-1.28-mJ
Internal emitter inductance L
E
Measured 5 mm from package - 7.5 - nH
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 7
- 1600 -
pFOutput capacitance C
oes
- 130 -
Reverse transfer capacitance C
res
-55-
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 15 A
V
R
= 200 V
dI/dt = 200 A/µs
-4260
ns
T
J
= 125 °C - 74 120
Diode peak reverse recovery charge I
rr
T
J
= 25 °C
See fig. 15
-4.06.0
A
T
J
= 125 °C - 6.5 10
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
- 80 180
nC
T
J
= 125 °C - 220 600
Diode peak rate of fall of recovery
during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
- 188 -
A/µs
T
J
= 125 °C - 160 -