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GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and operating frequencies 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL pending • Totally lead (Pb)-free SOT-227 RoHS COMPLIANT • Designed and qualified for industria
GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Temperature coeffecient of breakdown voltage TEST CONDITIONS VGE = 0 V, IC = 250 µA ΔV(BR)CES/ΔTJ VGE = 0 V, IC = 1.0 mA VCE(on) VGE = 15 V, IC = 100 A VGE = 15 V, IC = 50 A Collector to emitter saturation voltage See fig.
GA100NA60UP Insulated Gate Bipolar Transistor Vishay High Power Products (Ultrafast Speed IGBT), 50 A 100 I C , Collector-to-Emitter Current (A) 1000 Maximum DC Collector Current(A) ?TJ = 25 °C ?TJ = 150 °C 100 10 15V ?V20μs =PULSE WIDTH 80 60 40 20 GE 1 0.0 1.0 2.0 3.0 4.0 0 25 5.0 50 75 100 125 150 TC , Case Temperature ( ° C) VCE , Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Maximum Collector Current vs. Case Temperature 2.
GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A 14000 10000 ?Cies 8000 6000 Coes 4000 2000 RG = 5.0Ω VGE = 15V VCC = 480V Total Switching Losses (mJ) 12000 C, Capacitance (pF) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc IC = 120A 10 IC = 60A IC = 30A 1 Cres 0.1 0 1 10 -60 -40 -20 100 VCE , Collector-to-Emitter Voltage (V) 40 60 80 100 120 140 160 12 VCC = 400V I C = 50A RG = 5.
GA100NA60UP Insulated Gate Bipolar Transistor Vishay High Power Products (Ultrafast Speed IGBT), 50 A 100 1000 I F = 100A I F = 25A 100 Irr- ( A) Instantaneous forward current - IF (A) I F = 50A T J = 1 5 0 °C T J = 1 2 5 °C TJ = 10 25 °C 10 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C 1 0.0 0.4 0.8 1.2 1.6 1 100 2.0 F orwa rd V oltag e D ro p - V F M (V ) 1000 di f /dt - (A/μ s) Fig. 14 - Typical Recovery Current vs. dIF/dt Fig. 12 - Typical Forward Voltage Drop vs.
GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A 10000 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C IF = 100A 90% di (rec) M/dt- (A /µs) I F = 50A 10% Vge I F = 25A VC 90% td(off) 1000 10% IC 5% tf tr t d(on) t=5μs E on E off E ts = (Eon +Eoff ) 100 100 1000 di f /dt - (A/µ s) Fig. 16 - Typical dI(rec)M/dt vs. dIF/dt Fig. 17b - Test Waveforms for Circuit of Fig. 17a, Defining Eoff, td(off), tf Gate voltage D.U.T.
GA100NA60UP Insulated Gate Bipolar Transistor Vishay High Power Products (Ultrafast Speed IGBT), 50 A trr IC Qrr = tx 10 % VCC Vpk ∫ trr IC dt tx 10 % Irr VCC Irr Diode recovery waveforms Erec = ∫ Diode reverse recovery energy t3 t4 Vd IC dt t3 t4 Fig. 17d - Test Waveforms for Circuit of Fig. 17a, Defining Erec, trr, Qrr, Irr L 1000 V VG Gate signal device under test 50 V D.U.T. V C* 6000 µF 100 V Current D.U.T. Voltage in D.U.T. Fig.
GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A ORDERING INFORMATION TABLE Device code G A 100 N A 60 U P 1 2 3 4 5 6 7 8 1 - Device: G = IGBT 2 - Silicon technology: A = Generation 4 IGBT, Generation 2 HEXFRED® 3 - Current rating (100 = 100 A) 4 - N = High side chopper 5 - SOT-227 6 - Voltage rating (60 = 600 V) 7 - U = Ultrafast with matching diode 8 - None = Standard production P = Lead (Pb)-free CIRCUIT CONFI
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