Owner manual

www.vishay.com For technical questions, contact: [e-mail]
Document Number: 94543
2 Revision: 13-May-08
GA100NA60UP
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 250 µA
V
GE
= 0 V, I
C
= 1.0 mA
600 - - V
Temperature coeffecient of
breakdown voltage
ΔV
(BR)CES
/ΔT
J
-0.36 - V/°C
Collector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A
See fig. 1, 4
- 1.49 2.1
VV
GE
= 15 V, I
C
= 100 A - 1.80 -
V
GE
= 15 V, I
C
= 50 A, T
J
= 150 °C - 1.47 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 µA 3.0 - 6.0
Temperature coefficient of
threshold voltage
ΔV
GE(th)
/ ΔT
J
V
CE
= V
GE
, I
C
= 250 µA - - 7.6 - mV/°C
Forward transconductance g
fe
V
CE
= 100 V, I
C
= 50 A 34 52 - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - - 250 µA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 1.3 mA
Diode forward voltage drop V
FM
I
C
= 50 A
See fig. 12
-1.31.6
V
I
C
= 50 A, T
J
= 150 °C - 1.16 1.3
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 100 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
See fig. 7
- 430 640
nCGate emitter charge (turn-on) Q
ge
-4872
Gate collector charge (turn-on) Q
gc
- 130 190
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 60 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 5.0 Ω
energy losses include “tail” and
diode reverse recovery
-57 -
ns
Rise time t
r
-80 -
Turn-off delay time t
d(off
)-240-
Fall time t
f
-120 -
Turn-on switching loss E
on
-0.41 -
mJTurn-off switching loss E
off
-2.51 -
Total switching loss E
ts
-2.924.4
Turn-on delay time
t
d(on)
E
tot
T
J
= 150 °C
I
C
= 60 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 5.0 Ω
energy losses include “tail” and
diode reverse recovery
-57 -
ns
Rise time t
r
-80 -
Turn-off delay time t
d(off)
-380 -
Fall time t
f
-170 -
Total switching loss E
ts
-4.78 - mJ
Internal emitter inductance L
E
-2.0 - nH
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 6
-7400 -
pFOutput capacitance C
oes
-730 -
Reverse transfer capacitance C
res
-90 -
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 13
I
F
= 50 A
V
R
= 200 V
dI/dt = 200 A/µs
- 90 140
ns
T
J
= 125 °C - 120 180
Diode peak reverse recovery current I
rr
T
J
= 25 °C
See fig. 14
-7.311
A
T
J
= 125 °C - 11 16
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 15
- 360 550
nC
T
J
= 125 °C - 780 1200
Diode peak rate of fall recovery
during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 16
-370 -
A/µs
T
J
= 125 °C - 220 -