Owner manual

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Document Number: 94543
4 Revision: 13-May-08
GA100NA60UP
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
Fig. 6 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 7 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 8 - Typical Switching Losses vs.
Gate Resistance
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
Fig. 10 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 11 - Turn-Off SOA
1 10 100
0
2000
4000
6000
8000
10000
12000
14000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e gc , ce
res
g
c
oes ce
g
c
?
C
ies
C
oes
C
res
0 100 200 300 400 500
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 50A
CC
C
0 10 20 30 40 50
R
G
, Gate Resistance (
Ω
)
2
4
6
8
10
)Jm( sessoL gnihctiwS latoT
V
CC
= 480V
V
GE
= 15V
T
J
= 25°C
I
C
= 60A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.1
1
10
100
)Jm( sessoL gnihctiwS latoT
R
G
= 5.0Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 120A
I
C
= 60A
I
C
= 30A
20 40 60 80 100
I
C
, Collector Current (A)
0
2
4
6
8
10
12
)J
m
(
sessoL gnihc
tiwS latoT
R
G
= 5.0Ω
TJ = 150°C
V
GE
= 15V
V
CC
= 480V
1
10
100
1000
1 10 100 1000
V = 20V
T = 125 C
GE
J
o
?
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C