Owner manual

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Document Number: 94543
6 Revision: 13-May-08
GA100NA60UP
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
Fig. 16 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Fig. 17a - Test Circuit for Measurement of I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
,
I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 17b - Test Waveforms for Circuit of Fig. 17a,
Defining E
off
, t
d(off)
, t
f
Fig. 17c - Test Waveforms for Circuit of Fig. 17a,
Defining E
on
, t
d(on)
, t
r
di (rec) M/dt- (A /µs)
100
1000
10000
0001001
f
di /dt - (A/µs)
I = 100A
I = 50A
I = 25A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
D.U.T.
430 µF
80 %
of V
CE
Same type
device
as
D.U.T.
t=5μs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
ts on off
E = (E +E )
V
V
ge
∫
t2
V
CE
I
C
dt
t1
5 % V
CE
I
C
I
pk
V
CC
10 %
I
C
Vce
t1
t2
D.U.T. voltage
and current
Gate voltage D.U.T.
+ V
G
10 % + V
G
90 % I
C
tr
t
d
(on)
Eon =