Manual

VS-GA100TS120UPbF
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-12
1
Document Number: 94428
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
INT-A-PAK
™
“Half-Bridge” (Ultrafast Speed IGBT), 100 A
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
•HEXFRED
®
antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 182 A
V
CE(on)
at 100 A, 25 °C 2.25 V
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 182
A
T
C
= 93 °C 100
Pulsed collector current I
CM
Repetitive rating; V
GE
= 20 V, pulse width
limited by maximum junction temperature
200
Peak switching current
See fig. 17
I
LM
200
Peak diode forward current I
FM
200
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500
Maximum power dissipation P
D
T
C
= 25 °C 520
W
T
C
= 85 °C 270
Operating junction temperature range T
J
- 40 to + 150
°C
Storage temperature range T
Stg
- 40 to + 125