Manual

VS-GA100TS120UPbF
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-12
2
Document Number: 94428
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Note
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 1 mA 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A - 2.25 3
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2 2.4
Gate threshold voltage V
GE(th)
I
C
= 1.25 mA 3.0 4.4 6.0
Temperature coefficient of threshold voltage V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1.25 mA - - 12 - mV/°C
Forward transconductance g
fe
V
CE
= 25 V, I
C
= 100 A
Pulse width 50 μs, single shot
- 136 - S
Collector to emitter leaking current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 0.03 1.0
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 4.2 10
Maximum diode forward voltage V
FM
V
GE
= 0 V, I
F
= 100 A - 3.3 4.0
V
V
GE
= 0 V, I
F
= 100 A, T
J
= 125 °C - 3.2 3.8
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
V
CC
= 400 V
I
C
= 124 A
- 830 1245
nCGate to emitter charge (turn-on) Q
ge
- 140 210
Gate to collector charge (turn-on) Q
gc
- 275 412
Turn-on delay time t
d(on)
R
g1
= 15 
R
g2
= 0 
I
C
= 100 A
V
CC
= 720 V
V
GE
= ± 15 V
T
J
= 25 °C
- 570 -
ns
Rise time t
r
-85-
Turn-off delay time t
d(off)
- 581 -
Fall time t
f
- 276 -
Turn-on switching energy E
on
-7.6-
mJTurn-off switching energy E
off
(1)
-6.8-
Total switching energy E
ts
(1)
- 14.4 -
Turn-on delay time t
d(on)
R
g1
= 15 
R
g2
= 0 
I
C
= 100 A
V
CC
= 720 V
V
GE
= ± 15 V
T
J
= 125 °C
- 571 -
ns
Rise time t
r
-89-
Turn-off delay time t
d(off)
- 606 -
Fall time t
f
- 649 -
Turn-on switching energy E
on
-10-
mJTurn-off switching energy E
off
(1)
-16-
Total switching energy E
ts
(1)
-2645
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
- 18 672 -
pFOutput capacitance C
oes
- 830 -
Reverse transfer capacitance C
res
- 161 -
Diode reverse recovery time t
rr
I
C
= 100 A
R
g1
= 15 
R
g2
= 0 
V
CC
= 720 V
dI/dt = 1300 A/μs
- 149 - ns
Diode peak reverse current I
rr
- 104 - A
Diode recovery charge Q
rr
- 7664 - nC
Diode peak rate of fall of recovery during t
b
dI
(rec)M
/dt - 1916 - A/μs