Manual

VS-GA100TS120UPbF
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-12
3
Document Number: 94428
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Thermal resistance, junction to case
IGBT
R
thJC
-0.24
°C/WDiode - 0.35
Thermal resistance, case to sink per module R
thCS
0.1 -
Mounting torque
case to heatsink - 4.0
Nm
case to terminal 1, 2 and 3 For screws M5 x 0.8 - 3.0
Weight of module 200 - g
0.1 1 10 100
0
25
50
75
100
f - Frequency (kHz)
Load Current (A)
Duty cycle: 50 %
T
J
= 125 °C
T
sink
= 90 °C
Gate drive as specified
Power dissipation = 170 W
Ideal diodes
60 % of rated
voltage
Square wave:
-
0.5 1.0 1.5 2.0 2.5 3.0
1
10
100
1000
V
GE
= 15 V
500 µs pulse width
25 °C
125 °C
V
CE
- Collector to Emitter Voltage (V)
I
C
- Collector Current (A)
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
1
10
100
1000
V
GE
- Gate to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
V
GE
= 20 V
500 µs pulse width
125 °C
25 °C