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GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz Very low internal inductance ( 5 nH typical) Industry standard outline Compliant to RoHS Directive 2002/95/EC BENEFITS PRODUCT SUMMARY VCES 1200 V IC DC 75 A at 95 °C VCE(on) typical at 75 A, 25 °C 3.
GB75SA120UP www.vishay.
GB75SA120UP Vishay Semiconductors 160 10 140 TJ = 125 °C 1 120 100 ICES (mA) Allowable Case Temperature (°C) www.vishay.com 80 60 0.1 0.01 40 TJ = 25 °C 0.001 20 0.0001 0 0 20 40 60 80 100 120 140 IC - Continuous Collector Current (A) 93124_01 0 200 400 600 800 1000 1200 VCES (V) 93124_04 Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 6.0 1000 5.5 100 TJ = 25 °C IC (A) Vgeth (V) 5.0 10 4.
GB75SA120UP www.vishay.com Vishay Semiconductors 4.0 14 3.5 12 Eon 10 Energy (mJ) Energy (mJ) 3.0 2.5 Eoff 2.0 1.5 Eon 8 Eoff 6 4 1.0 2 0.5 0 0 10 20 30 40 50 60 70 80 0 IC (A) 93124_07 20 30 40 50 RG (Ω) 93124_09 Fig. 7 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs.
GB75SA120UP www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 12a - Clamped Inductive Load Test Circuit Fig. 12b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig.
GB75SA120UP www.vishay.
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