Manual

GB75SA120UP
www.vishay.com
Vishay Semiconductors
Revision: 06-Oct-11
1
Document Number: 93124
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Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
FEATURES
• NPT Generation V IGBT technology
•Square RBSOA
• Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 75 A at 95 °C
V
CE(on)
typical at 75 A, 25 °C 3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 131
A
T
C
= 80 °C 89
Pulsed collector current I
CM
200
Clamped inductive load current I
LM
200
Gate to emitter voltage V
GE
± 20 V
Power dissipation P
D
T
C
= 25 °C 658
W
T
C
= 80 °C 369
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA 1200 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 75 A - 3.3 3.8
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C - 3.6 3.9
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 4 5 6
Temperature coefficient of
threshold voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 12 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 3 250 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C - 4 20 mA
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA