Manual

GB75SA120UP
www.vishay.com
Vishay Semiconductors
Revision: 06-Oct-11
2
Document Number: 93124
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SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V
- 690 -
nCGate to emitter charge (turn-on) Q
ge
-65-
Gate to collector charge (turn-on) Q
gc
- 250 -
Turn-on switching loss E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH
Energy losses
include tail and
diode recovery
(see fig. 18)
-1.53-
mJ
Turn-off switching loss E
off
-1.76-
Total switching loss E
tot
-3.29-
Turn-on switching loss E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 125 °C
-2.49-
Turn-off switching loss E
off
-3.45-
Total switching loss E
tot
-5.94-
Turn-on delay time t
d(on)
- 281 -
ns
Rise time t
r
-45-
Turn-off delay time t
d(off)
- 300 -
Fall time t
f
- 126 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 200 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V, L = 500 μH
Fullsquare
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 - 150 °C
Junction to case R
thJC
- - 0.19
°C/W
Case to sink per module R
thCS
-0.05-
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight - 30 - g