Manual

GB75SA120UP
www.vishay.com
Vishay Semiconductors
Revision: 06-Oct-11
6
Document Number: 93124
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Generation 5
3 - Current rating (75 = 75 A)
4 - Circuit configuration (S = Single switch without antiparallel diode)
5 - Package indicator (A = SOT-227)
6 - Voltage rating (120 = 1200 V)
8 - Totally lead (Pb)-free
7 - Speed/type (U = Ultrafast IGBT)
Device code
51324678
G B 75 S A 120 U P
3 (C)
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037