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GB75YF120UT www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 75 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Speed 8 kHz to 60 kHz • Material categorization: For definitions of compliance please see www.vishay.
GB75YF120UT www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) TEST CONDITIONS VGE = 0 V, IC = 500 μA Zero gate voltage collector current VGE(th)/TJ ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES TYP. MAX. - - IC = 75 A, VGE = 15 V - 3.4 4.0 IC = 100 A, VGE = 15 V - 3.8 4.
GB75YF120UT www.vishay.com Vishay Semiconductors THERMISTOR ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Resistance R25 B value B TEST CONDITIONS MIN. TYP. MAX. 4538 5000 5495 TJ = 100 °C 468.6 493.3 518 TJ = 25 °C/50 °C 3307 3375 3443 UNITS °K THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface MIN. TYP. MAX. UNITS RthJC (IGBT) - - 0.
GB75YF120UT www.vishay.com 160 Vishay Semiconductors 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 VCE (V) 100 ICE (A) 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 7 6 9 11 15 17 19 VGE (V) VCE (V) Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 μs Fig. 8 - Typical VCE vs.
GB75YF120UT www.vishay.com Vishay Semiconductors 1000 1 tdOFF Switching Time (ns) TJ = 125°C ICES (mA) 0.1 0.01 tdON tF 100 tR TJ = 25°C 10 0.001 400 600 800 1000 20 1200 30 40 50 Fig. 11 - Typical Zero Gate Voltage Collector Current 80 Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 ; VGE = 15 V 5.5 14000 5 12000 TJ = 25°C 4.5 10000 Energy (μJ) Vgeth (V) 70 IC (A) VCES (V) 4 TJ = 125°C 3.5 8000 EON 6000 3 4000 2.
GB75YF120UT www.vishay.com Vishay Semiconductors 100 120 100 80 5 ohm 60 IRR (A) IRR (A) 80 60 27 ohm 40 40 20 47 ohm 20 0 0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 10 20 30 40 50 RG (Ω) IF (A) Fig. 19 - Typical Diode IRR vs. Rg TJ = 125 °C; IF = 75 A Fig. 17 - Typical Diode IRR vs.
GB75YF120UT www.vishay.com Vishay Semiconductors Driver L + VCC - D.U.T. 0 D + C - 1K 900 V D.U.T. Fig. 22 - Gate Charge Circuit (Turn-Off) Fig. 24 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - -5V D.U.T. D.U.T./ Driver 1000 V Rg + VCC Rg Fig. 23 - RBSOA Circuit Fig. 25 - Switching Loss Circuit R= VCC ICM D.U.T. + VCC Rg Fig. 26 - Resistive Load Circuit Revision: 21-Mar-13 Document Number: 93172 7 For technical questions within your region: DiodesAmericas@vishay.
GB75YF120UT www.vishay.
Outline Dimensions Vishay Semiconductors ECONO2 4PAK DIMENSIONS in millimeters (inches) Z Y 20.5 13.2 ± 0.15 1.25 0.8 - 0.02 - 0.06 105 ± 0.1 34.29 30.48 34.29 30.48 26.67 22.86 22.86 19.05 19.05 11.43 11.43 7.62 7.62 X 2:1 0.8 ± 0.03 3.81 21 ± 0.03 21 22 49 48 2 4 5 6 7 8 10 12 15 16 17 19 7.62 7.62 47 46 10.5 5.5 ± 0.05 11.43 11.43 33 32 30 29282726 42 ± 0.15 38 373635 21 ± 0.03 4140 23 24 4443 45.4 ± 0.2 + 1.0 - 0.5 7.62 7.62 11.43 15.24 19.05 22.86 30.48 39.49 19.05 22.
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