User Manual

GB75YF120UT
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-13
3
Document Number: 93172
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
 150 °C
Fig. 4 - Reverse Bias SOA
T
J
= 150 °C; V
GE
= 15 V
THERMISTOR ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R
25
4538 5000 5495

T
J
= 100 °C 468.6 493.3 518
B value B T
J
= 25 °C/50 °C 3307 3375 3443 °K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case IGBT R
thJC
(IGBT) - - 0.26
°C/WJunction to case DIODE R
thJC
(DIODE) - - 0.56
Case to sink, flat, greased surface R
thCS
(MODULE) - 0.02 -
Mounting torque (M5) 2.7 - 3.3 Nm
Weight - 170 - g
0 20406080100120
0
20
40
60
80
100
120
140
160
I
C
(A)
T
C
(°C)
0 20406080100120140160
0
100
200
300
400
500
T
C
(°C)
P
D
(W)
1 10 100 1000 10000
0.01
0.1
1
10
100
1000
V
CE
(V)
IC (A)
10 100 1000 10000
1
10
100
1000
V
CE
(V)
I
C
(A)