User Manual

GB75YF120UT
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-13
4
Document Number: 93172
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Fig. 5 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 500 μs
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 500 μs
Fig. 7 - Typical Diode Forward Characteristics
t
p
= 500 μs
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 125 °C
Fig. 10 - Typical Transfer Characteristics
V
CE
= 20 V; t
p
= 500 μs
0123456
0
20
40
60
80
100
120
140
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
V
CE
(V)
I
CE
(A)
012345678
0
20
40
60
80
100
120
140
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
V
CE
(V)
I
CE
(A)
0.0 1.0 2.0 3.0 4.0 5.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Tj = 25°C
Tj = 125°C
V
F
(V)
I
F
(A)
7 9 11 13 15 17 19
0
2
4
6
8
10
12
14
16
18
20
I
CE
= 75A
I
CE
= 50A
I
CE
= 25A
V
GE
(V)
V
CE
(V)
7 9 11 13 15 17 19
0
2
4
6
8
10
12
14
16
18
20
I
CE
= 75A
I
CE
= 50A
I
CE
= 25A
V
GE
(V)
V
CE
(V)
56789101112
0
50
100
150
200
250
300
T
J
= 25°C
T
J
= 125°C
V
GE
(V)
I
CE
(A)