User guide

QID4515001
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
2 11/11 Rev. 6
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specied
Ratings Symbol QID4515001 Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (V
GE
= 0V) V
CES
4500 Volts
Gate-Emitter Voltage (V
CE
= 0V) V
GES
±20 Volts
Collector Current (T
C
= 25°C) I
C
150 Amperes
Peak Collector Current (Pulse) I
CM
300* Amperes
Diode Forward Current** (T
C
= 25°C) I
F
150 Amperes
Diode Forward Surge Current** (Pulse) I
FM
300* Amperes
I
2
t for Diode (t = 10ms) I
2
t 10 kA
2
sec
Maximum Collector Dissipation (T
C
= 25°C, IGBT Part, T
j(max)
≤ 150°C) P
C
1440 Watts
Mounting Torque, M6 Terminal Screws — 44 in-lb
Mounting Torque, M6 Mounting Screws — 44 in-lb
Module Weight (Typical) — 900 Grams
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V
iso
9.0 kVolts
Partial Discharge Q
pd
10 pC
(V1 = 4800 V
RMS
, V2 = 3500 V
RMS
, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width, t
psc
10 µs
(V
CC
≤ 3200V, V
GE
= ±15V, R
G(off)
≥ 60Ω, T
j
= 125°C)
Electrical Characteristics, T
j
= 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 2.7 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 10mA, V
CE
= 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 150A, V
GE
= 15V, T
j
= 25°C — 3.5 3.9*** Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125°C — 4.0 — Volts
Total Gate Charge Q
G
V
CC
= 2250V, I
C
= 150A, V
GE
= 15V — 1.4 — µC
Emitter-Collector Voltage** V
EC
I
E
= 150A, V
GE
= 0V — 4.7 5.6 Volts
* Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.