6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 (800) 274-4284 Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ● 800-274-4284 ● 952-933-6190 ● FAX: 952-933-6223 ● WWW.CHTECHNOLOGY.
VS-GA50TP60S www.vishay.
VS-GA50TP60S www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.95 2.40 VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.15 - UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 250 μA, TJ = 25 °C 3.5 4.5 5.
VS-GA50TP60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature Storage temperature range TEST CONDITIONS MIN. TYP. MAX. UNITS TJ - - 150 °C TStg - 40 - 125 °C - - 0.54 - - 1.04 - 0.05 - IGBT Junction to case RthJC Diode Case to sink (Conductive grease applied) RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GA50TP60S www.vishay.com Vishay Semiconductors 120 Module 100 IC (A) 80 60 40 RG = 3.3 Ω VGE = ± 15 V TJ = 125 °C 20 0 0 100 200 300 400 500 600 700 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-2 10-3 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 1.6 100 90 1.4 80 1.2 Erec 1.0 60 E (mJ) IF (A) 70 50 40 0.8 0.6 30 125 °C 20 VCC = 300 V Rg = 3.3 Ω VGE = - 15 V TJ = 125 °C 0.4 25 °C 0.2 10 0 0 0 0.5 1 1.5 2 VF (V) Fig.
VS-GA50TP60S www.vishay.com Vishay Semiconductors 1.6 1.4 1.2 Erec E (mJ) 1.0 0.8 0.6 VCC = 300 V IF = 50 A VGE = - 15 V TJ = 125 °C 0.4 0.2 0 0 5 10 15 20 25 30 35 Rg (Ω) Fig. 9 - Diode Switching Loss vs. RG ZthJC (K/W) 101 100 Diode 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 27-Nov-12 www.vishay.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
