User Manual

VS-GA50TP60S
www.vishay.com
Vishay Semiconductors
Revision: 27-Nov-12
3
Document Number: 94809
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature T
J
- - 150 °C
Storage temperature range T
Stg
- 40 - 125 °C
Junction to case
IGBT
R
thJC
- - 0.54
K/WDiode - - 1.04
Case to sink (Conductive grease applied) R
thCS
-0.05-
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
0
0123 4
10
20
30
40
50
60
70
80
90
100
25 °C
125 °C
V
GE
= 15 V
V
CE
(V)
I
C
(A)
V
GE
(V)
I
C
(A)
0
10
20
30
40
50
60
70
80
90
100
4567891011
125 °C
25 °C
V
CE
= 20 V
0
0.5
1
1.5
2
2.5
020406080
100
I
C
(A)
E
on
, E
off
(mJ)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 3.3 Ω
V
CC
= 300 V
E
on
E
off
R
g
(Ω)
0
0.5
1
1.5
2
2.5
E
on
, E
off
(mJ)
0 5 10 15 20 25 30 35
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 50 A
V
CC
= 300 V