6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • Material categorization: For definitions of compliance please see www.vishay.
VS-GB90DA60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 600 - - VGE = 15 V, IC = 100 A - 2.4 2.
VS-GB90DA60U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C Maximum junction and storage temperature IGBT Junction to case RthJC Diode - - 0.20 - - 0.33 °C/W Case to sink thermal resistance, flat greased surface RthCS - 0.1 - Mounting torque, on termianls and heatsink T - - 1.
VS-GB90DA60U Vishay Semiconductors 160 140 120 100 TJ = 150 °C 80 TJ = 125 °C 60 40 TJ = 25 °C 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VCE - Collector-to-Emitter Voltage (V) IC- Collector-to-Emitter Current (A) www.vishay.com Ic = 100 A 3.2 3 Ic = 75 A 2.8 2.6 Ic = 50 A 2.4 2.2 2 1.8 Ic = 30 A 1.6 1.4 1.2 1 0 6.5 20 40 80 100 120 140 160 TJ - Junction Temperature (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
VS-GB90DA60U www.vishay.com Vishay Semiconductors 2000 4 1500 3 2.5 Qrr (nC) Energy Losses (mJ) VR = 200 V IF = 50 A Eon 3.5 Eoff 2 1.5 125 °C 1000 500 1 25 °C 0.5 0 0 0 10 20 30 40 50 100 1000 Rg (Ω) diF/dt (A/μs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 360 V, VGE = 15 V, Diode used: 60APH06 Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode 35 VR = 200 V IF = 50 A td(on) td(off) 1 25 20 Irr (A) Switching Time (μs) 30 tr 0.
VS-GB90DA60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 PDM D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.01 0.001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics, IGBT ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.
VS-GB90DA60U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id 19a - Clamped Inductive Load Test Circuit 19b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T.
VS-GB90DA60U www.vishay.
Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
