User Manual

VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
Revision: 19-Sep-12
2
Document Number: 94771
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA 600 - -
V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A - 2.4 2.8
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 3 3.4
V
GE
= 15 V, I
C
= 100 A, T
J
= 150°C - 3.3 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 3 3.9 5.0
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 125 °C - 2.5 -
Temperature coefficient of threshold
voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 10 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 7 100 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 1.5 6.0
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - 6 10
Forward voltage drop, diode V
FM
I
C
= 100 A, V
GE
= 0 V - 1.6 2.1
VI
C
= 100 A, V
GE
= 0 V, T
J
= 125 °C - 1.56 2.0
I
C
= 100 A, V
GE
= 0 V, T
J
= 150 °C - 1.53 -
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 100 A, V
CC
= 480 V, V
GE
= 15 V
- 460 690
nCGate to emitter charge (turn-on) Q
ge
- 160 250
Gate to collector charge (turn-on) Q
gc
-70130
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode
recovery.
Diode used
60APH06
-0.39-
mJTurn-off switching loss E
off
-1.10-
Total switching loss E
tot
-1.49-
Turn-on delay time t
d(on)
- 245 -
ns
Rise time t
r
-53-
Turn-off delay time t
d(off)
- 240 -
Fall time t
f
-63-
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 125 °C
-0.52-
mJTurn-off switching loss E
off
-1.24-
Total switching loss E
tot
-1.76-
Turn-on delay time t
d(on)
- 240 -
ns
Rise time t
r
-54-
Turn-off delay time t
d(off)
- 250 -
Fall time t
f
-80-
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 300 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V, L = 500 μH
Fullsquare
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
-95-ns
Diode peak reverse current I
rr
-10- A
Diode recovery charge Q
rr
- 480 - nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
- 144 - ns
Diode peak reverse current I
rr
-16- A
Diode recovery charge Q
rr
- 1136 - nC