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VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt® antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz • Low stray internal inductances • Low switching loss • Material categorization: For definitions of compliance please see www.vishay.
VS-GT300FD060N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 300 A - 1.72 2.5 VGE = 15 V, IC = 300 A, TJ = 125 °C - 1.93 - 2.9 4.8 7.5 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.
VS-GT300FD060N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) Q1 - Q2 - Q3 - Q4 TRENCH IGBT Turn-on switching loss EON Turn-off switching loss EOFF Total switching loss ETOT Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time - 10.7 - IC = 300 A VCC = 300 V VGE = 15 V Rg = 22 L = 500 μH TJ = 125 °C - 15.6 - - 26.
VS-GT300FD060N www.vishay.com Vishay Semiconductors 2.4 600 550 500 2.2 TJ = 25 °C VCE (V) 400 IC (A) 300 A 2 450 TJ = 125 °C 350 300 TJ = 175 °C 250 1.8 1.6 150 A 1.4 200 80 A 1.2 150 100 1 50 0.8 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 20 40 60 80 100 120 140 160 180 VCE (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V Fig. 4 - Typical Trench IGBT Collector to Emitter Voltage vs.
VS-GT300FD060N www.vishay.com Vishay Semiconductors 100 100 175 °C 10 1 125 °C ICES (mA) ICES (mA) 1 TJ = 175 °C 10 0.1 0.01 TJ = 125 °C 0.1 0.01 0.001 0.001 TJ = 25 °C 25 °C 0.0001 0.0001 0.00001 100 200 300 400 500 0.00001 100 600 200 300 Fig. 7 - Typical Trench IGBT Zero Gate Voltage Collector Current 3.8 500 3.4 TJ = 175 °C 3.0 Energy (mJ) 400 350 IF (A) 600 Fig.
VS-GT300FD060N www.vishay.com Vishay Semiconductors 17 10 000 15 Switching time (ns) Energy (mJ) 13 EOFF 11 9 EON 7 5 td(on) 1000 td(off) tr tf 100 3 10 1 20 60 100 140 180 220 260 300 20 340 23 26 29 32 35 38 41 44 47 50 IC (A) Rg (Ω) Fig. 13 - Typical Trench IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH Fig. 16 - Typical Trench IGBT Switching Time vs.
VS-GT300FD060N Vishay Semiconductors 2400 28 26 24 22 20 18 16 14 12 10 8 6 4 2 100 2200 TJ = 125 °C 2000 TJ = 125 °C 1800 1600 Qrr (nC) Irr (A) www.vishay.com 1400 1200 1000 800 TJ = 25 °C TJ = 25 °C 600 400 200 0 200 300 400 100 500 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 19 - Typical Diode Reverse Recovery Current vs. dIF/dt, Vrr = 200 V, IF = 50 A Fig. 20 - Typical Diode Reverse Recovery Charge vs.
VS-GT300FD060N www.vishay.
Outline Dimensions www.vishay.com Vishay Semiconductors DIAP Low Profile - 4 Leads DIMENSIONS in millimeters 14 2.8 x 0.5 7.5 16 ± 0.5 15 ± 0.5 21.9 ± 0.5 6.5 108 ± 1 7 x) 8 2 12 6 5 4 11 12 Ø6 .40 3 1 27 ± 0.5 48 ± 0.5 Revision: 20-Apr-12 27 ± 0.5 (4 M5 15 ± 0.5 10 5.1 ± 0.5 48 ± 0.25 62 ± 1 9 18.2 ± 0.5 17 ± 0.5 93 ± 0.25 27 ± 0.5 48 ± 0.5 Document Number: 95515 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.
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