Owner manual

VS-GT300FD060N
www.vishay.com
Vishay Semiconductors
Revision: 15-Oct-12
2
Document Number: 93569
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Collector to emitter breakdown voltage BV
CES
V
GE
= 0 V, I
C
= 500 μA 600 - -
VCollector to emitter voltage V
CE(ON)
V
GE
= 15 V, I
C
= 300 A - 1.72 2.5
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C - 1.93 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 16.8 mA 2.9 4.8 7.5
Temperature coefficient of threshold
voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 17.8 - mV/°C
Forward transconductance g
fe
V
CE
= 20 V, I
C
= 300 A - 315 - S
Transfer characteristics V
GE
V
CE
= 20 V, I
C
= 300 A - 7.9 - V
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - 0.4 250
μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 300 -
Gate to emitter leakage current I
GES
V
GE
= ± 20 V, V
CE
= 0 V - - ± 500 nA
D5 - D6 CLAMPING DIODE
Cathode to anode blocking voltage V
BR
I
R
= 100 μA 600 - -
V
Forward voltage drop V
FM
I
F
= 150 A - 2.17 2.7
I
F
= 150 A, T
J
= 125 °C - 1.61 -
Reverse leakage current I
RM
V
R
= 600 V - 0.25 200
μA
V
R
= 600 V, T
J
= 125 °C - 140 -
D1 - D2 - D3 - D4 AP DIODE
Forward voltage drop V
FM
I
F
= 150 A - 2.17 2.7
V
I
F
= 150 A, T
J
= 125 °C - 1.61 -
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Total gate charge (turn-on) Q
g
I
C
= 300 A
V
CC
= 400 V
V
GE
= 15 V
- 750 -
nCGate to ermitter charge (turn-on) Q
ge
- 210 -
Gate to collector charge (turn-on) Q
gc
- 300 -
Turn-on switching loss E
ON
I
C
= 150 A, V
CC
= 300 V
V
GE
= 15 V, R
g
= 10 
L = 500 μH , T
J
= 25 °C
-2.1-
mJ
Turn-off switching loss E
OFF
-3.1-
Total switching loss E
TOT
-5.2-
Turn-on switching loss E
ON
I
C
= 300 A, V
CC
= 300 V
V
GE
= 15 V, R
g
= 22 
L = 500 μH, T
J
= 25 °C
-8.6-
Turn-off switching loss E
OFF
- 15.4 -
Total switching loss E
TOT
-24-
Turn-on switching loss E
ON
I
C
= 150 A
V
CC
= 300 V
V
GE
= 15 V
R
g
= 10 
L = 500 μH
T
J
= 125 °C
-2.6-
Turn-off switching loss E
OFF
-3.7-
Total switching loss E
TOT
-6.3-
Turn-on delay time t
d(on)
- 453 -
ns
Rise time t
r
- 120 -
Turn-off delay time t
d(off)
- 366 -
Fall time t
f
- 119 -