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VS-GT75NP120N www.vishay.
VS-GT75NP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 2.08 - VGE = 15 V, IC = 75 A, TJ = 175 °C - 2.35 - UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 3.5 mA, TJ = 25 °C 5.0 6.0 7.
VS-GT75NP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ - 40 - 150 °C TStg - 40 - 125 °C - - 0.28 - - 0.48 - 0.05 - Operating junction temperature range Storage temperature range TEST CONDITIONS IGBT Junction to case per ½ module RthJC Diode Case to sink (Conductive grease applied) RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.
VS-GT75NP120N www.vishay.com Vishay Semiconductors 16 104 VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C VCC = 600 V 14 103 10 td(off) t (ns) VGE (V) 12 8 6 tr tf td(on) 102 4 2 IC = 75 A 0 0 100 200 300 101 400 0 10 20 30 40 IC (mA) Rg (Ω) Fig. 5 - Gate Charge Characteristics Fig. 8 - Typical Switching Times vs. Rg 50 150 102 125 Cies 25 °C 100 C (nF) VF (V) 101 75 125 °C 50 100 Coes 25 Cres 10-1 0 0 25 50 75 100 0 0.5 1 1.5 2 2.
VS-GT75NP120N www.vishay.com Vishay Semiconductors 100 Diode ZthJC (K/W) 10-1 IGBT 10-2 10-3 10-4 10-5 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 01-Feb-13 www.vishay.com/doc?95524 Document Number: 94829 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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