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VS-SA61BA60 www.vishay.
VS-SA61BA60 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO TEST CONDITIONS Resistive or inductive load t = 10 ms Maximum peak, one-cycle non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.
VS-SA61BA60 Vishay Semiconductors 220 1000 100 TJ = 150 °C Average Power Loss (W) 200 TJ = 125 °C TJ = 25 °C 10 180˚ (Sine) 160 140 180˚ (Rect) 120 100 80 60 40 0 0 0.5 1 1.5 2 2.5 3 0 3.5 10 20 30 40 50 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 4 - Current Rating Characteristics 10 000 TJ = 150 °C IR - Reverse Current (μA) 180 20 1 1000 TJ = 125 °C 100 TJ = 25 °C 10 1 0.
VS-SA61BA60 ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t1 t2 Notes: Single Pulse (Thermal Resistance) 1. Duty factor D = t1/ t2 2. Peak TJ = Pdm x ZthJC + Tc 0 .01 0.00001 0.0001 0.001 0.01 0.1 1 tp - Square Wave Pulse Duration (μs) Fig.
VS-SA61BA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.
VS-SA61BA60 www.vishay.
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