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VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max.
VS-UFB250FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. UNITS 600 - - IF = 100 A - 1.02 1.19 IF = 100 A, TJ = 175 °C - 0.87 1.02 VR = VR rated - 1.3 50 μA V TJ = 175 °C, VR = VR rated - - 4 mA VR = 600 V - 72 - pF MIN. TYP. MAX.
VS-UFB250FA60 Vishay Semiconductors 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 100 TJ = 25 °C 10 TJ = 150 °C TJ = 175 °C 100 10 TJ = 150 °C 1 0.1 0.01 0.001 TJ = 25 °C 0.0001 1 0.5 0 1.0 1.5 2.0 0 2.5 100 200 300 400 500 600 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current(Per Leg) Fig. 2 - Typical Reverse Current vs.
VS-UFB250FA60 Vishay Semiconductors 180 500 160 450 DC 120 350 100 80 300 250 200 60 Square wave (D = 0.5) 80 % rated VR applied 40 TJ = 25 °C 150 100 20 50 100 0 0 50 100 150 200 250 300 Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 160 14 000 140 12 000 120 40 Qrr (nC) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.
VS-UFB250FA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.
VS-UFB250FA60 www.vishay.
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