Instruction Manual

VS-UFB250FA60
www.vishay.com
Vishay Semiconductors
Revision: 27-Jun-11
2
Document Number: 93626
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 600 - -
V
Forward voltage V
FM
I
F
= 100 A - 1.02 1.19
I
F
= 100 A, T
J
= 175 °C - 0.87 1.02
Reverse leakage current I
RM
V
R
= V
R
rated - 1.3 50 μA
T
J
= 175 °C, V
R
= V
R
rated - - 4 mA
Junction capacitance C
T
V
R
= 600 V - 72 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
T
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 500 A/μs
V
R
= 200 V
- 166 - ns
T
J
= 150 °C - 291 -
Peak recovery current I
RRM
T
J
= 25 °C - 41 -
A
T
J
= 150 °C - 64 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 3.5 -
μC
T
J
= 150 °C - 10.0 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.43
°C/WJunction to case, both leg conducting - - 0.215
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227