6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
VS-UFL80FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max.
VS-UFL80FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM TEST CONDITIONS IR = 100 μA IRM Junction capacitance CT TYP. MAX. 600 - - IF = 30 A - 1.1 1.43 IF = 60 A - 1.27 1.49 IF = 30 A - 1.0 1.23 TJ = 125 °C IF = 60 A Reverse leakage current MIN. UNITS V - 1.17 1.35 VR = VR rated - 0.1 50 μA TJ = 175 °C, VR = VR rated - 0.
VS-UFL80FA60 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 100 TJ = 125 °C 10 TJ = 25 °C 1 TJ = 175 °C 100 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
VS-UFL80FA60 www.vishay.com Vishay Semiconductors 250 VR = 200 V 150 DC 100 75 50 150 IF = 30 A, TJ = 25 °C 100 Square wave (D = 0.50) 80 % Rated VR applied 25 0 50 0 100 10 20 30 40 50 60 70 80 90 100 110 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs.
VS-UFL80FA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.
VS-UFL80FA60 www.vishay.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.